| 摘要 |
PURPOSE: To obtain a semiconductor memory in which the data can be written, easily with low power while decreasing the ON resistance sufficiently and enhancing the integration. CONSTITUTION: A first conductivity type region 4 for providing a resistor 5 is formed on the major surface of a semiconductor substrate through an insulation layer 1. The first conductivity type region 4 is connected, at the opposite ends thereof, with first and second electrodes 15, 16 for applying a heating voltage. A plurality of anti-fuse type memory elements 9, 10, 11 are juxtaposed while straddling the first conductivity type region 4. The plurality of anti-fuse type memory elements 9, 10, 11 have one ends connected with an internal circuit and through a first switch 19 with a third electrode 17 and the other ends connected commonly with a fourth electrode 18. |
