CONTACT PHOTOLITHOGRAPHIC PROCESSING METHOD FOR FORMATION OFMETAL LINE ON SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a photolithographic processing method that can form a metal line 0.5μm or less in line width on a substrate easily with high productivity. SOLUTION: In a photolithographic processing method for forming a metal line 104 on a substrate 100 coated with a reversal photo resist and exposed through a mask 103 in order to reproduce a line pattern, the ratio of the width of the line to be formed to the corresponding aperture width of the mask 103 is changed by controlling exposure energy. Exposure energy for obtaining the metal line 104 of narrower width than the aperture width of the mask 103 is 20 to 28mJ, and exposure energy for obtaining the metal line 104 of wider width than the aperture width of the mask 103 is 200 to 300mJ.