| 摘要 |
PURPOSE: To prepare a capacitor of a small size not affected by a parasitic capacitance between electrodes and to facilitate the design of a high-integrated circuit by a method wherein an electrostatic relative permittivity of a dielectric film having a low permittivity and surrounding the outside of an upper electrode is made a specific value or below and further a dimensional component forming the dielectric film is made a specific length or below. CONSTITUTION: A pair of electrodes 1 and 3 are so laminated as to hold a dielectric 2 between them and a dielectric 4 of which the relative permittivity is smaller than that of the dielectric 2 is provided so that it covers the whole lateral side of the laminated body. An electrostatic relative permittivity of the dielectric film 4 is made 8.0 or below and the length of a dimensional component having a large effect on the capacitance of a semiconductor device is made 100μm or below. Then, the dielectric 4 is deposited on the upper side of an element having a three-layer structure. The film thickness thereof is about the same as the size in the vertical direction of a capacitor or above it. By etching the dielectric 4 until the upper electrode 3 of the capacitor is exposed, the capacitor is made to have a structure wherein it is protected by the lateral wall of the dielectric 4.
|
