| 摘要 |
PURPOSE: To obtain an excellent PN junction by doping controlled metal oxide semiconductor with impurities, by controlling defects by introducing hydrogen or the like in the defects due to the excessive oxygen in a part of metal oxide semiconductor of copper suboxide or the like, and controlling the carrier density and the conductivity type. CONSTITUTION: A metal oxide semiconductor 25 is metal semiconductor obtained by oxidizing metal films 24, 24'. An insulating protective film is formed on the surfaces of an insulating film 26 and the metal oxide semiconductor 25. By leading out electrodes connected with source drain electrodes 24, 24', a transistor having a gate electrode 22 is formed. The carrier density and the conductivity type are controlled by eliminating oxygen defects. The P-type conductivity or the N-type conductivity, and the resistivity can be controlled by impurity doping. In these cases, ion implantation method or the like can be applied. Thereby a thin film transistor of high mobility can be formed in a large area by low temperature treatment. |
