| 摘要 |
PURPOSE: To produce an optical waveguide chip of high quality in a short time. CONSTITUTION: The process to deposit a core layer or a clad layer is carried out as described below. First, an upper grounded electrode 12 and a lower electrode 13 are disposed parallel to each other in a reaction chamber 11, and a substrate 18 is mounted on the lower electrode 13. Then a third grounded electrode 16 is disposed to surround the periphery of the substrate above the upper surface of the substrate 18. By introducing an org. silicon compd. source material containing silicon alkoxide added, at need, with fluorine gas to control the refractive index into the reaction chamber 11 and applying high frequency power to the lower electrode 13, plasma of the source gas is produced to deposit a silicon oxide layer on the surface of the substrate 18. |
