SEMICONDUCTOR DEVICE HAVING TWO-LAYER ELECTRODE STRUCTURE

摘要

PURPOSE: To improve the dielectric strength of an interlayer insulation film between a floating gate and control gate of an EPROM the thickness of which is set below specified value. CONSTITUTION: An EPROM is structured with a floating gate 4 and control gate 6 made of a P-doped polycrystalline Si and an interlayer insulation film 5 having a thickness set to 330A lower than 400, and the P concn. in the floating gate 4 is set to about 3×10<20> cm<-3> or less.