FORMING METHOD FOR CONTACT WINDOW OF SEMICONDUCTOR

摘要

The method of forming contact hole of semiconductor device comprises the steps of : forming a gate electrode(23,24) stacked with a polycrystal silicone film(23) and a silicone oxide film(24) on a semiconductor substrate(200) with a gate oxide(22); forming a spacer(25) with a silicone oxide film on the side of the gate electrode(23,24); forming an aluminum oxide film(26) on the entire surface of the substrate; forming a flattened film(27) with a silicone oxide film on the aluminum oxide film(26); exposing some region of the aluminum oxide film(26) by dry etching of the flattened film(27); and wet etching of the exposed aluminum oxide film(26).