Highly integrated semiconductor device e.g. DRAM prodn. process

摘要

A method of producing a highly integrated semiconductor device involves (a) heating a wafer, having a silicon oxide surface film, in a high vacuum reaction chamber; (b) forming a conductive layer, as a lower electrode of the device, over the wafer by a plasma deposition process; and (c) annealing the wafer to stabilise the conductive layer. Also claimed is a similar method in which step (b) comprises forming a first target material (pref. Ta or Ti) layer and then a second target material (pref. Pt) layer.