发明名称 POWER TRANSISTOR
摘要 The power transistor comprises an emitter layer formed to maintain the voltage of an emitter P-N junction part(20) constant regardless of a voltage drop caused by a metal, by parabolizing an emitter P-N junction part(20) by increasing the length of the P-N junction part(20) at an emitter contacting part(10) of an emitter terminal of a power transistor.
申请公布号 KR960013941(B1) 申请公布日期 1996.10.10
申请号 KR19880008129 申请日期 1988.06.30
申请人 LG SEMICONDUCTOR CO., LTD 发明人 HU, DONG-HYUN
分类号 H01L29/70;(IPC1-7):H01L29/70 主分类号 H01L29/70
代理机构 代理人
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