| 摘要 |
The method of manufacturing capacitor storage electrode comprises the steps of : forming an isolation oxide film(2), a word line(3), a first insulating layer(4) for flattening and a second insulating layer(5); forming a number of contact holes(7) by etching the insulating layers(4,5), and forming a contact plug(9) by filling the contact holes(7); forming a bit line(11), a third insulating layer(13) pattern and a fourth insulating layer spacer(15); forming a photoresist pattern(19) and etching a fifth insulating layer(17) isotropically; forming a first conductive layer(22) for storage electrode, a sixth insulating layer(24) and a photoresist pattern(26) for a first storage electrode mask; forming a second conductive layer(28) for a storage electrode and a photoresist pattern(30) for a second storage electrode; forming a hexahedral storage electrode(32) by etching the exposed second conductive layer(28) and the first conductive layer(22); and exposing the inside and the bottom of the storage electrode(32).
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