| 摘要 |
The method of manufacturing capacitor comprises the steps of : forming a contact hole connected to a source region and depositing a first polycrystal silicone film(8) after flattening by forming a poly-layer insulating film(20) on a first flattened insulating film(5); depositing a first insulating film(9) and a second insulating film(10); removing the second and the first insulating film(10,9); forming a second polycrystal silicone film(11); forming a polycrystal silicone spacer(11') by spacer etching of the second polycrystal silicone film(11); removing some of the second, the first insulating film(10,9) and the poly-layer insulating film(20); and forming a plate electrode by depositing a third polycrystal silicone film(13) after forming a dielectric film(12).
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