MOS TRANSISTOR

摘要

The method of manufacturing MOS transistor with lightly doped drain(LDD) region comprises the steps of : forming a gate electrode(4) on a semiconductor substrate(1); forming an oxidation-preventive film(5) on the side wall of the gate electrode(4) and on the source region of the substrate; forming an oxide side wall(71) by etching an oxide film(7) formed on the side wall of the gate electrode(4) and a drain region(D) by thermal oxidation; forming a LDD(D1) by injecting p-type lightly doped impurity into the substrate; forming a silicone gate side wall by anisotropic etching of a polysilicone film; and removing the oxidation-preventive film(5), and forming a source/drain by injecting p-type heavily doped impurity into the entire surface of the substrate.