NON-VOLATILE SEMICONDUCTOR MEMORY

摘要

The method of manufacturing non-volatile semiconductor memory comprises the steps of : forming a tunneling oxide(2) on a silicone substrate(1); forming a first polysilicon layer(3) on the tunneling oxide(2); forming an insulating film(4) on the surface of the first polysilicone layer(3); forming a second polysilicone layer(5) on the insulating film(4); patterning the tunneling oxide(2), the first polysilicone layer(3), the insulating film(4) and the second polysilicone layer(5); and forming a source(6) and a drain(7) on the silicone substrate(1) by ion-injecting.