SOI TRANSISTOR STRUCTURE

摘要

a first insulating film(2) formed on a p-type semiconductor substrate(1); a p-type polysilicone(3) formed on the first insulating film(2); a n-type active region(6) formed on the patterned region of the first insulating film(2) and the polysilicone(3); a gate oxide(7a) formed on the active region(6); a gate electrode(8a) formed on the gate oxide(7a); a side wall insulating film(9) formed on the side of the gate electrode(8a) and on the end of the gate oxide(7a); and a source/ drain region(10,11) formed in the p-type polysilicone(3) with a n-type polysilicone.