Verfahren zur Herstellung einer Halbleiterspeicherstruktur unter Verwendung einer phasenverschiebenden Maske

摘要

A semiconductor memory structure (Figure 6A) comprises a pattern layer having a plurality of elemental patterns, and another pattern layer having, in a single cell or adjacent cells, more than one pair of element patterns including mutually proximate parallel portions, and is formed using a phase shifting mask having a light shielding region (10), light transmitting portions (12) and phase shifting films (11) on a substrate (1) transparent to the wavelength of exposure light, wherein the light transmitting portions (12) and the phase shifting films (11) form pairs each including mutually proximate parallel portions.