发明名称 |
LATERAL FIELD EFFECT TRANSISTOR HAVING REDUCED DRAIN-TO-SOURCE ON-RESISTANCE |
摘要 |
A power field effect transistor has a laterally extending channel region (103) which is not formed by double diffusion. The channel region may be formed in epitaxial silicon (105) which is not doped after being grown. The drain electrode (100) of the transistor is disposed on a bottom surface of the substrate (101) upon which the transistor structure is formed. When the transistor is turned on, the channel region inverts thereby forming a conductive path from a source region (108), laterally through the inverted channel region, substantially vertically through a sinker region to the underlying substrate, through the substrate, and to the drain electrode.
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申请公布号 |
WO9631908(A1) |
申请公布日期 |
1996.10.10 |
申请号 |
WO1996US04175 |
申请日期 |
1996.04.04 |
申请人 |
SILICONIX INCORPORATED |
发明人 |
HSHIEH, FWU-IUAN;CHANG, MIKE, F.;VAN DER LINDE, JAN;HO, YUEH-SE |
分类号 |
H01L21/336;H01L29/06;H01L29/08;H01L29/10;H01L29/78;(IPC1-7):H01L29/76;H01L21/265 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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