发明名称 |
MANUFACTURE OF SHALLOW JUNCTION SEMICONDUCTOR DEVICE |
摘要 |
forming a field oxide film(2), a gate oxide film(4), a polysilicon gate(3), a side wall spacer(5), and a source/drain junction(6) on a silicon substrate(1); evaporating a polysilicon film(7) in a finite thickness on a surface of wafer; crystallizing the polysilicon film(7) by a heat treatment; removing all remains except for a photoresistor(8-1); removing all remains except for a silicon layer(7-1) by the etch-back; injecting an impurity into the source/drain region; forming source/drain junction(9); performing a heat treatment.
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申请公布号 |
KR960013624(B1) |
申请公布日期 |
1996.10.10 |
申请号 |
KR19920025020 |
申请日期 |
1992.12.22 |
申请人 |
KOREA ELECTRONICS & TELECOMMUNICATION RESEARCH INSTITUTE;KOREA TELECOM CORP. |
发明人 |
BAEK, JONG-TAE;SONG, YUN-HO;YU, JONG-SUN;NAM, KI-SOO |
分类号 |
H01L21/335;(IPC1-7):H01L21/335 |
主分类号 |
H01L21/335 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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