MANUFACTURE AND STRUCTURE OF SEMICONDUCTOR MEMORY CELL

摘要

The method of manufacturing capacitor of semiconductor memory cell comprises the steps of : forming a hemispherical structure by thermal process after forming a first polysilicone layer(36), an insulating layer(38) and a second polysilicone layer(40); etch back after depositing a mask layer on the hemispherical polysilicone layer(40) to leave the mask layer(42) on the groove; blanket etching of the second polysilicone layer (40), and forming plural holes on the insulating layer(38) by etching the insulating layer(38); and forming a storage electrode(50) of a capacitor by photolithography after forming a third polysilicone layer(44), etching the third polysilicon layer(44) and the second polysilicon layer(40) to expose some of the insulating layer(38) and removing the insulating layer(38).