HIGH SPEED SOURCE VOLTAGE SUPPLYING CIRCUIT OF MEMORY CHIP,申请号KR19910000512U-传众专利搜索

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发明名称	HIGH SPEED SOURCE VOLTAGE SUPPLYING CIRCUIT OF MEMORY CHIP
摘要
申请公布号	KR960008553(Y1)	申请公布日期	1996.10.04
申请号	KR19910000512U	申请日期	1991.01.15
申请人	LG SEMICONDUCTOR CO., LTD.	发明人	KIM, TAE-HYUNG;LEE, CHOL-HEE
分类号	G11C11/407;(IPC1-7):G11C11/407	主分类号	G11C11/407
代理机构		代理人
主权项
地址

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