MONOLITHIC CAPACITOR STRUCTURE

摘要

This specification discloses a polarized capacitor for use in monolithic structures, particularly those using field effect transistors. One plate of this capacitor is a metal layer overlying and insulated from a semiconductor body which has a diffusion in it adjacent to the overlying metal layer. The boundaries of this diffusion form a rectifying junction with the rest of the semiconductor body. When a voltage is applied between the metal layer and the diffusion an electric field is formed under the layer and adjacent to the diffusion so as to create an inversion layer which forms with the diffusion the second plate of the capacitor.