| 发明名称 |
SEMICONDUCTOR PRESSURE SENSOR AND PRODUCTION METHOD THEREOF |
| 摘要 |
A semiconductor pressure sensor comprising a single-crystal silicon substrate, an enclosed gap acting as a backup for overpressure applied to a diaphragm produced by epitaxial growth on the single-crystal silicon substrate, and a strain sensor formed in the diaphragm made of the single-crystal silicon.
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| 申请公布号 |
WO9630950(A1) |
申请公布日期 |
1996.10.03 |
| 申请号 |
WO1996JP00816 |
申请日期 |
1996.03.28 |
| 申请人 |
YOKOGAWA ELECTRIC CORPORATION;WATANABE, TETSUYA;KUDO, TAKAHIRO;IKEDA, KYOICHI |
发明人 |
WATANABE, TETSUYA;KUDO, TAKAHIRO;IKEDA, KYOICHI |
| 分类号 |
G01L9/04;G01L9/00;G01L19/06;H01L29/84;(IPC1-7):H01L29/84;G01L9/101 |
主分类号 |
G01L9/04 |
| 代理机构 |
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