Halbleiteranordnung zur Verbesserung der Hochfrequenzcharakteristiken und zur Vermeidung von Rissen im Chip

摘要

A semiconductor device comprises a plurality of gate electrodes (14), drain electrodes (5), and source electrodes (11), axi-symmetrically formed on opposite sides of a gate pad (12) and drain pad (4). Two source pads (9, 10) are arranged at the ends of these electrodes, to which the source electrodes are connected, so that a gate width (WW) can be shortened. Therefore, an output power, gain, etc., can be increased, and the high-frequency characteristics can be improved. Further, when arranging a plurality of semiconductor devices in parallel, the semiconductor chip can be formed in the shape of a square, i.e., the aspect ratio thereof can be reduced, therefore, cracks in the semiconductor chip (semiconductor device) can be avoided.