| 摘要 |
<p>PURPOSE:To obtain a photomask without a stain layer and the level difference of a substrate by providing a metallic oxide film which can be etched between a mask substrate and a light shielding film, radiating an energy beam so that the defect of a pattern may be corrected, and then selectively removing the metallic oxide film. CONSTITUTION:The metallic oxide film 2 which has etching resistance to an etchant and which can be etched by a 2nd etchant that does not dissolve the light shielding film 3 is provided between the mask substrate 1 and the light shielding film 3. After forming the light shielding film 3 by the 1st etchant, the energy beam is radiated in a state where the metallic oxide film 2 is left all over the surface of the substrate so as to correct the defect of the pattern, and then the metallic oxide film is selectively removed by the 2nd etchant. Thus, ions do not get into the substrate at the time of correcting the black defective pattern of the mask, and the lowering of light transmissivity is prevented from occurring in the case of light transfer because of the level difference of the substrate.</p> |
