Low power sense amplifier for gain memory cells

摘要

A low power sense amplifier to sense the output of any memory cell whose output may be ill-defined is especially suited for use with gain memory cells. The low power sense amplifier circuit is based on an inverter with a feedback loop with additional circuitry providing stability after signal sensing. The bit sense line is discharged before sensing and after sensing it is locked to either a logical "0" or a logical "1" corresponding to the logical value of the gain memory cell during a read cycle. The low power sense amplifier provides a logic output that is well defined with respect to the supply voltage and corresponds to the logic valve of gain memory cell. The low power sense amplifier has no bias current flow during signal sensing and no power consumption in the stand by mode. The present invention low power sense amplifier is capable of being shared by a first bit sense line and a second bit sense line. The low power sense amplifier has a relatively low component count which allows the amplifier to be capable of very fast sensing of the output signals. <IMAGE>