Method for making one stage of an integrated circuit

摘要

Method for making one stage of an integrated circuit formed of a dielectric layer (1) shrouding interconnection lines (5) and connection points (4) which connect these lines (5) to conductive portions (6) on the opposite side of the dielectric layer (1). The method consists in forming the whole of the dielectric layer (1) during the same step, in then successively etching cavities at the sites of the connection points and of the interconnection lines by means of two masks laid successively, and finally in filling these cavities in a single step with conductive material in order to simultaneously form the connection points (4) and the interconnection lines (5). Manufacture is therefore simple and is accompanied by good flatness of the finished product.