CVD-Diamantbeschichtung auf hydridbildenden Metallsubstraten
摘要
A method for producing CVD diamond film on a substrate comprised of a hydride-forming metal is provided. The substrate provides for easy release of the CVD diamond coating formed thereon upon exposure to a hydrogen pressure. Self-supporting CVD diamond films of large dimension are easily obtained without dissolving the substrate. The substrate can be used in conventional CVD reactors.
申请公布号
DE69209247(T2)
申请公布日期
1996.10.02
申请号
DE1992609247T
申请日期
1992.12.01
申请人
GENERAL ELECTRIC CO., SCHENECTADY, N.Y., US
发明人
KOSKY, PHILIP GEORGE, SCHENECTADY, NEW YORK 12309, US;ANTHONY, THOMAS RICHARD, SCHENECTADY, NEW YORK 12309, US
