| 摘要 |
A method of precleaning a silicon wafer to remove a layer of native silicon oxide thereon comprising adding a mixture of argon and oxygen to a plasma etch chamber (100) including a wafer (117) to be cleaned mounted on a cathode (119) in said chamber (100), while maintaining the pressure in the chamber (100) below about 0.4 Pa (3 millitorr). The oxygen is added to react with silicon atoms in the plasma but not with silicon atoms of the single crystal silicon wafer. The presence of oxygen in the plasma at low pressure ensures steady plasma generation and uniform etching across the wafer (117). <IMAGE> |
