| 发明名称 |
SEMICONDUCTOR MEMORY CELL |
| 摘要 |
PURPOSE:To make a memory cell high-speed and low-power consumption by setting the cell load resistance to an intermediate value at a transition time between the information holding state and the selection state and preventing the reduction of cell potential. |
| 申请公布号 |
JPS5379331(A) |
申请公布日期 |
1978.07.13 |
| 申请号 |
JP19760154852 |
申请日期 |
1976.12.24 |
| 申请人 |
HITACHI LTD |
发明人 |
HONMA NORIYUKI;YAMAGUCHI KUNIHIKO |
| 分类号 |
G11C11/411;H01L21/8229;H01L27/102;H03K3/286 |
主分类号 |
G11C11/411 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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