| 摘要 |
<p>Disclosed is a BiMOS integrated circuit, which has: a bipolar transistor for output pull-up; a BiMOS hybrid gate buffer section which comprises a MOS transistor for output pull-down which is longitudinally connected to the bipolar transistor, and a MOS transistor for base drive which comprises an output which is connected a base of the bipolar transistor to drive the base and a gate which is connected to an input; and a logical section which comprises at least a CMOS gate, the logical section having an output which is connected to the input; wherein the base drive MOS transistor has an input capacitance less than that of the output pull-down MOS transistor. <IMAGE></p> |
