| 发明名称 |
Compound semiconductor light emitting device and method of preparing the same |
| 摘要 |
<p>A compound semiconductor light emitting device of high performance and a method which can industrially prepare the same are provided. The compound semiconductor light emitting device includes a GaAs substrate (1), a buffer layer (2) consisting of GaN, having a thickness of 10 nm to 80 nm, which is formed on the substrate (1), an epitaxial layer (3) consisting of AlxGa1-xN (0 </= 1 < 1) which is formed on the buffer layer (2), an incommensurate plane (8) which is located on the interface between the buffer layer (2) and the epitaxial layer (3), a light emitting layer (4) which is formed on the epitaxial layer (3), and a clad layer (5) which is formed on the light emitting layer (4). The buffer layer (2) is formed by organic metal chloride vapor phase epitaxy at a first temperature, while the epitaxial layer (3) is formed by organic metal chloride vapor phase epitaxy at a second temperature which is higher than the first temperature. The light emitting layer preferably consists of InyGa1-yN (0 < y < 1) which is doped with Mg. <IMAGE></p> |
| 申请公布号 |
EP0735598(A2) |
申请公布日期 |
1996.10.02 |
| 申请号 |
EP19960103584 |
申请日期 |
1996.03.07 |
| 申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD |
发明人 |
MIURA, YOSHIKI;MATSUBARA, HIDEKI;MATSUSHIMA, MASATO;SEKI, HISASHI;KOUKITU, AKINORI |
| 分类号 |
H01L33/00;H01L33/32;(IPC1-7):H01L33/00 |
主分类号 |
H01L33/00 |
| 代理机构 |
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