| 摘要 |
PURPOSE: To provide a semiconductor device with which high integration can be accomplished by a simple structure. CONSTITUTION: Elements such as a MOS transistor gate electrode and the wiring layer such as a wiring, etc., to be used to connect each element, are formed on the single crystal silicon substrate 2 of a chip 1. Also, a bonding pad 10 is formed on the chip 1. The bonding pad 10 is brought into contact with the upper wiring layer 5, and the bonding pad 10 is connected to the substrate 2 and the lower wiring layer 3 through the wiring layer 5. The bonding pad 10 is extendingly provided from the front surface of the chip 1 to its back side passing through the side face, the part formed on the back side and the side face becomes bonding pads 11 and 12, and bonding wires 13 and 14 are connected to the bonding pads 11 and 12 from the back side and the side face of the chip 1. |
