| 摘要 |
PROBLEM TO BE SOLVED: To form a submicron photo resist pattern on a semiconductor substrate by using an aluminum nitride layer on a reflection layer in a semiconductor device and preventing the reflection of undesirable radiation beam during a photolithography treatment using a deep ultraviolet radiation beam. SOLUTION: The main surface of a semiconductor substrate 12 is covered with a dielectric layer 16 and a reflection layer (a conductive layer) 18. Then, an ARC(a anti-reflective coating) 20 is deposited on the conductive layer 18. The ARC 20 consists of an aluminum nitride layer. The ARC 20 is deposited and then a resist layer 22 is formed so that the ARC 20 is covered. After that, for example, a lithography mask 24 is arranged on an element 10, and a radiation light wave 30 is shielded by an opaque part 28 but freely passes a transparent part 26 and reaches the resist layer 22. The radiation beam 30 is an ultraviolet radiation light wave with a wavelength of 300 nm or less. |
