| 摘要 |
A stress-detection semiconductor device has a stress detection circuit for detecting electrostatic stress applied to a product semiconductor device. The stress detection circuit has a plurality of stress detection units each including a resistor and a stress registering element connected to the resistor, and a resistance value of the resistor is specified as a different value by each of the plurality of stress detection units. The stress-detection semiconductor device is accompanied by a plurality of product semiconductor devices and sent through a plurality of production processes, and the electrostatic stress applied to the product semiconductor devices during each of the production processes is detected by measuring and comparing characteristics of the stress registering element before and after each of the production processes. Consequently, an inferior portion of a manufacturing device wherein an excessive electrostatic stress is applied to the product semiconductor device can be easily determined, and further, an inferior portion of a design of the semiconductor device can be easily improved. |
