| 摘要 |
PURPOSE: To provide a resist material excellent in resist characteristics such as sensitivity, resolution and pattern shape and fit for lithography using far UV of short wavelength or KrF excimer laser light of short wavelength by incorporating a compd. having an acid-decomposable group and partial sulfonic ester of polyhydric phenol as a compd. which forms an acid when irradiated with active light. CONSTITUTION: In this resist compsn. contg. a compd. having an acid- decomposable group and a compd. which forms an acid when irradiated with active light, the latter compd. is partial sulfonic ester of polyhydric phenol, preferably a compd. represented by formula I or II. In the formula I, R is a group represented by formula II, each of (m) and (n) is an integer of 1-5 and m+n<=6. In the formulae II, III, each of R<1> -R<12> is H, halogen, hydroxyl or 1-3C straight chain or branched alkyl. This resist compsn. is suitable especially for use as a positive type resist for fine working of a semiconductor device. |
