SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

摘要

PURPOSE: To simplify a process for manufacturing a semiconductor device provided with a non-volatile memory and to flatten the surface of the device. CONSTITUTION: An SOI-MOSFET 6 has such a structure that a source/drain is formed on an SOI layer 3B provided to a silicon substrate 1 through the intermediary of a buried oxide film 2, and a gate oxide film 4B and a gate electrode 5B are provided onto the source/drain. A MOSFET 7 used for a memory is composed of a source/drain formed on a silicon substrate 1, a buried oxide film 2 and the gate oxide film 2A formed at the same time, an SOI layer 3B and a floating gate 3A of single crystal semiconductor layer provided concurrently, and furthermore a gate oxide film 4B, a gate electrode 5B, an insulating film 4A, and a control gate 5A formed at the same time respectively.