| 摘要 |
An integrated circuit device includes a barrier layer as an underlying layer for a wiring conductor layer. The barrier layer is formed of titanium oxide-titanium nitride or titanium nitride or composite layers of titanium, 2-titanium nitride and titanium nitride. The barrier layer may contain oxygen or carbon. A method of manufacturing an integrated circuit device includes steps of introducing a gas to the vicinity of a substrate disposed within a vacuum chamber, and forming a titanium oxide-titanium nitride thin film or titanium nitride film or the composite film by depositing titanium in vapor phase by using a cluster-type ion source while irradiating the substrate with nitrogen ions. A thin film forming apparatus comprises a cluster type ion source and a gas ion source. The cluster type ion source includes a vacuum chamber maintained at a predetermined vacuum level, a substrate disposed within the vacuum chamber, a gas introducing pipe for introducing gas to the vicinity of the substrate, a vapor generating source for ejecting a vapor of a material for deposition toward the substrate and producing vapor or cluster of the material, an ionizing electrode for ionizing a part of the vapor or clusters, and an accelerating electrode for controllably accelerating the ionized vapors or ionized clusters to thereby transport them to the substrate together with vapors or clusters of the material which are not ionized. The gas ion source includes a nitrogen gas introducing pipe disposed within the vacuum chamber, a gas ionizing electrode for ionizing a nitrogen gas, and an accelerating electrode for controllably accelerating nitrogen ions resulting from ionization by the gas ionizing electrode. Fine contact holes having a high aspect ratio can satisfactorily be coated with a wiring conductor film.
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