发明名称 |
Opto-semiconductor device with piezoelectric |
摘要 |
An opto-semiconductor device is disclosed which is provided with a quantum well structure comprising a first and a second barrier layer and a well layer sandwiched by the barrier layers. The barrier layers are provided in at least part thereof with a strain layer enabled to generate an internal electric field by a piezoelectric effect. The barrier layers are adapted to sandwich the well layers.
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申请公布号 |
US5561301(A) |
申请公布日期 |
1996.10.01 |
申请号 |
US19950377602 |
申请日期 |
1995.01.25 |
申请人 |
FUJITSU LIMITED |
发明人 |
INOUE, TADAO |
分类号 |
H01L29/06;G02F1/017;H01L31/0352;H01L33/06;H01L33/14;H01L33/16;H01L33/30;H01L33/40;H01S5/00;H01S5/30;H01S5/34;(IPC1-7):H01L29/06;H01L31/032;H01L31/033 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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