| 摘要 |
PURPOSE: To make the opening of a mask substantially normal to a substrate by employing a reversed image resist film as a mask at the time of reactive ion matching of a laminated semiconductor layer. CONSTITUTION: A reversed image resist film 10 is applied to the surface of a laminated semiconductor layer and patterned such that the part to be etched of the semiconductor layer is opened. The reversed image resist is exposed while aligning a patterned glass mask and then patterned such that the opening in a reversed image resist film 13 provided on the semiconductor layer 12 has an obtuse inclination angle α upon baking. The inclination angle αof the side wall at the opening can be set at about 90 deg. through patterning of the resist by regulating the first exposure thereof and the temperature and time of baking. With such method, the opening of mask can be made substantially normal to the substrate. |
