| 摘要 |
<p>PURPOSE: To obtain an etching process which can give uniform and clean etched surfaces without bubble adhesion to the etched surface, when a compound semiconductor substrate of which surface is patterned with photoresist and hydrophobic, is etched. CONSTITUTION: The compound semiconductor is etched with an etching solution comprising an aqueous solution containing a straight-chain carboxylic acid represented by the chemical formula, CnHmCOOH (n=1-3, m=n+2) and hydrogen peroxide aqueous solution.</p> |
