| 摘要 |
PURPOSE: To make resolution and focus depth of an end pattern of an isolated pattern and a cycle pattern approximately the same as those of an inner pattern of a cycle pattern by applying a second resist after performing exposure of a cycle pattern for a first resist and performing exposure and development of an isolated pattern which is larger than that of a cycle pattern. CONSTITUTION: A first resist 12 is applied on an exposure board 11. It is exposed by excimer laser beam 14 by using a phase shift mask 13 provided with a cycle pattern. A second resist 15 is applied on the first resist 12 and a member corresponding to an unnecessary pattern 12c of at least a pattern exposed by the mask 13 is exposed by an (i) line 17 by using a second mask 16 which is a light screening part. When development is carried out, unexposed parts 12b and 15b prevent the unnecessary part 12c from dissolving in developer and exposure parts 15a and 12a excepting the unnecessary pattern 12c are removed. A hole or a groove 18 having approximately the same resolution and focus depth as a cycle pattern can be formed in this way. |
