| 摘要 |
PURPOSE: To obtain a method for fabricating a semiconductor light emitting element employing a gallium nitride based compound semiconductor in which the emission characteristics of a semiconductor laser or a side emitting LED can be enhanced by setting the etched side face normal to the surface of a substrate. CONSTITUTION: In the method for fabricating a semiconductor light emitting element, a gallium nitride based compound semiconductor layer comprising n-type layers 3, 4, p-type layers 6, 7, and an emission (active) layer 5 is formed on a substrate 1 and then a part of the semiconductor layer is etched. The method comprises a step (a) for depositing a photoresist film 10 on the surface of the semiconductor layer, a step (b) for solidifying the photoresist film by baking, a step (c) for making an opening 13 in the baked photoresist film substantially normally to the surface of the semiconductor layer, and a step (d) for subjecting the semiconductor layer to reactive ion etching using the photoresist film, provided with the opening, as a mask. |
