| 摘要 |
PURPOSE: To obtain a semiconductor memory having simple structure in which a thin ferroelectric film is sandwiched between stripe electrodes arranged in a stripe while intersecting perpendicularly. CONSTITUTION: The semiconductor memory comprises first stripe electrodes 20 arranged in stripe, second stripe electrodes 40 arranged in stripe, a thin ferroelectric film 30 provided at least the intersections of first and second electrodes, wherein the semiconductor memory cells are formed in a first semiconductor substrate 10 pasted to a second substrate 54. |
