| 摘要 |
PURPOSE: To lessen a time necessary for writing data in a semiconductor ROM device for delivery as a product by a method wherein the cross points of a cross point cell structure are connected with amorphous silicon, and the wiring is selectively spot-irradiated with an ultraviolet laser beam according to data patterns. CONSTITUTION: A word line L1 and data lines DA1 , DA2 , DA3 , ... are connected together at the cross points of them through a-Si wirings 511 , 512 , 513 , .... When data are written in this semiconductor ROM device of cross point cell structure, the a-Si wirings 511 , 512 , 513 , ... are selectively spot-irradiated with ultraviolet laser rays corresponding to a data pattern. a-Si is turned crystalline or into a poly-Si structure by irradiation with ultraviolet laser rays, so that the a-Si wirings 511 , 512 , 513 , ... are lessened enough in load resistance to become electrically conductive, and data are capable of being written in this semiconductor ROM device. |
