| 摘要 |
In a method for forming a shallow junction in a surface region of a semiconductor substrate of a first conductive type, first plasma ions of one of Si and Ge is implanted into the surface region of the semiconductor substrate in a vacuum, second plasma ions of one of impurities of a second conductive type is implanted into the surface region of the semiconductor substrate in a vacuum, and, after performing the above-described two implantation steps, the semiconductor substrate is heat treated in a specific condition selected from the same vacuum condition and an inert gas condition. The substrate can be heat-treated in the specific condition within 20 hours after the substrate is brought into the air from the vacuum where the implantation steps have been performed. The first plasma ion implantation is performed prior to the second plasma ion implantation. However, both of them can be performed simultaneously.
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