| 摘要 |
PURPOSE: To obtain a planar power semiconductor element in which high breakdown strength can be obtained stably by presenting predetermined quantity of charges on the interface between specific insulating film and semiconductor layer or in the insulating film thereof. CONSTITUTION: The power semiconductor element comprises a heavily doped semiconductor layer 102 of second conductivity type formed selectively on the surface of a high resistance semiconductor layer 101 of first conductivity type, and a lightly doped semiconductor layer 103 of second conductivity type formed around the semiconductor layer 102 contiguously thereto. The power semiconductor element further comprises an insulating film 106 deposited on the semiconductor layers 102, 103 and the semiconductor layer 101 on the outside thereof, a first main electrode 107 provided on the semiconductor layers 102, a heavily doped semiconductor layer 105 of first or second conductivity type formed on the opposite side to the semiconductor layers 102, 103, and a second main electrode 109. Furthermore, a predetermined quantity of charges are presented on the interface between an insulating film and a lightly doped semiconductor layer 103 of second conductivity, in an insulating film 106 deposited thereon or on the insulating film 106. |
