Integrated circuit structure including CMOS devices protected by patterned nitride passivation and method for the fabrication thereof

摘要

A CMOS integrated circuit structure is disclosed having a patterned nitride passivation layer, wherein the nitride is patterned such that it does not overlie the thin gate oxide portions of one or more of the MOS devices. When protection against the effects of external radiation is desired, the thin gate oxide areas of the PMOS devices are left uncovered by the patterned nitride passivation layer. When protection is desired against the effects of internally generated "hot electrons", the thin gate oxide areas of the NMOS devices are left uncovered by the patterned nitride passivation layer.