发明名称 Heating method and manufacturing method for semiconductor device
摘要 In a heating method for semiconductor devices, gas is filled in a heat chamber in which a heat target (semiconductor device) is mounted, and then the gas is compressed to produce heat. The heat target is heated to a desired temperature by the produced heat. Before the gas compression is performed, the heat target is preferably pre-heated by a heater.
申请公布号 US5561088(A) 申请公布日期 1996.10.01
申请号 US19950380812 申请日期 1995.01.30
申请人 SONY CORPORATION 发明人 SAMESHIMA, TOSHIYUKI
分类号 F26B3/00;F27D99/00;H01L21/00;H01L21/20;H01L21/203;H01L21/22;H01L21/265;H01L21/28;H01L21/324;H01L21/331;H01L21/336;(IPC1-7):H01L21/324 主分类号 F26B3/00
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