| 摘要 |
PURPOSE: To obtain a ferroelectric thin-film constitution body having a ferroelrctric thin film having the properly arranged c-axis direction perpendicular to the surface of a substrate regardless of the kind thereof even without using a conventional expensive MgO single crystal substrate in relation to a ferroelectric thin-film constitution body used in, e.g. a pyroelectric type infrared detecting element, an actuator or a nonvolatile and nondestructive memory. CONSTITUTION: This ferroelectric thin-film constitution body is obtained by forming an oxide thin film of a Bi-based layer perovskite type crystal structure on a substrate so as to properly arrange the (c)-axis of the crystal axis in the direction perpendicular to the substrate surface and further forming a ferroelectric thin film having the perovskite type crystal structure represented by the general formula ABO3 (A denotes one or more of Bi, Pb, Ba, Sr, Ca, Na, K and rare earth elements; B denotes one or more of Ti, Nb, Ta, W, Mo, Fe, Co, Cr and Zr) on the resultant oxide thin film. |
