| 摘要 |
PURPOSE: To obtain a semiconductor laser having low threshold current value by imparting strain anisotropically into a specified axial plane of an active layer of a hexagonal compound semiconductor. CONSTITUTION: The semiconductor element employs a III-V compound semiconductor, i.e., an AlGaInN based material, as a hexagonal compound semiconductor. Strain is introduced in parallel with the face (c). In other words a mask 104 is formed in stripe, on one major surface of a sapphire substrate 103. A groove 105 is then made, in stripe, using the mask 104 and an etching liquid of hot sulfuric acid, for example. Furthermore, a layer 106 filled with AlN is grown selectively only in the groove 105 using a material of AlN, for example, and the mask 104. Consequently, coefficient of thermal expansion is distributed in the thickness direction and a uniaxial strain can be generated in the substrate when crystal growth of AlGaInN emission layer is effected at high temperature of 1000 deg.C or above. |
