A device for epitaxially growing objects and method for such a growth

摘要

A device for epitaxially growing objects of for instance SiC by Chemical Vapour Deposition on a substrate (13) has means (15) for feeding a first flow of at least a carrier gas and reactive gases needed for the growth into a susceptor (7) towards the substrate and means (25, 29) adapted to conduct an additional flow of gases not participating in said growth substantially in parallel with said first flow along circumferential walls (8) of the susceptor past the substrate and out through outlet means (31) of the susceptor. The device comprises means (25) arranged to separate the path of said first flow from said circumferential walls and guide it at a distance therefrom to the region of said object (28).